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AFT21H350W03SR6 aft21h350w04gsr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 63 watt asymmetrical doherty rf power ldmos transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqa = 750 ma, v gsb =0.7vdc,p out = 63 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2110 mhz 16.4 47.1 7.5 --26.0 2140 mhz 16.5 46.3 7.5 --27.9 2170 mhz 16.5 45.2 7.4 --30.1 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. document number: aft21h350w03s rev. 0, 9/2013 freescale semiconductor technical data 2110?2170 mhz, 63 w avg., 28 v airfast rf power ldmos transistors AFT21H350W03SR6 aft21h350w04gsr6 ni--1230s--4s AFT21H350W03SR6 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb carrier peaking 1. pin connections 1 and 2 are dc coupled and rf independent. (1) ni--1230gs--4l aft21h350w04gsr6 ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +125 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 324 0.79 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 63 w cw, 28 vdc, i dqa = 750 ma, v gsb = 0.7 vdc, 2140 mhz r ? jc 0.49 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a (carrier) gate threshold voltage (5) (v ds =6vdc,i d = 146 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (5) (v dd =28vdc,i da = 750 madc, measured in functional test) v gs(q) 1.4 1.8 2.2 vdc drain--source on--voltage (4) (v gs =10vdc,i d =4.0adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b (peaking) gate threshold voltage (5) (v ds =6vdc,i d = 303 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (4) (v gs =10vdc,i d =4.0adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955 4. side a and side b are tied together for these measurements. 5. each side of device measured separately. . (continued)
AFT21H350W03SR6 aft21h350w04gsr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc,p out =63wavg., f = 2110 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 15.5 16.4 18.5 db drain efficiency ? d 43.6 47.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.0 7.5 ? db adjacent channel power ratio acpr ? --26.0 --24.1 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 750 ma, f = 2140 mhz vswr 10:1 at 32 vdc, 195 w cw output power (3 db input overdrive from 110 w cw rated power) no device degradation typical performances (3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 110 ? w p out @ 3 db compression point (4) p3db ? 400 ? w am/pm (maximum value measured at the p3db compression point across the 2110 to 2170 mhz frequency range) ? ? 40 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 60 mhz bandwidth @ p out =63wavg. g f ? 0.4 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.01 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.003 ? db/ ? c 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurements made with device in an a symmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 figure 2. AFT21H350W03SR6 test circuit component layout aft21hw350 rev. 8.1 c18 c16 c17 c9 c10 c11 c12 c13 c14 c15 c19 r3 c8 c6 c2 c4 r5 r1 c1 c3 r2 c7 c5 r4 cut out area c p v dda v ddb v gga v ggb note: v dda and v ddb must be tied together and powered by a single dc power supply. d46604 table 5. AFT21H350W03SR6 test circui t component designations and values part description part number manufacturer c1 0.3 pf chip capacitor atc100b0r3bt500xt atc c2 0.7 pf chip capacitor atc100b0r7bt500xt atc c3, c4, c11, c12 6.8 pf chip capacitors atc100b6r8ct500xt atc c5, c6, c14, c17 9.1 pf chip capacitors atc100b9r1ct500xt atc c7, c8, c15, c16 10 ? f chip capacitors grm55dr61h106ka88l murata c9 0.5 pf chip capacitor atc100b0r5bt500xt atc c10, c13 0.8 pf chip capacitors atc100b0r8bt500xt atc c18, c19 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp r1 51 ? , 1/2 w chip resistor crcw201051r0jnef vishay r2, r3 3.0 k ? , 1/4 w chip resistors crcw12063k00fkea vishay r4, r5 2.7 ? , 1/4 w chip resistors crcw12062r70fkea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.5 d46604 mtl
AFT21H350W03SR6 aft21h350w04gsr6 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) -- 2 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 6 -- 3 2060 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. 15 17 16.8 16.6 -- 3 5 50 48 46 44 -- 2 0 -- 2 3 -- 2 6 -- 2 9 ? d , drain efficiency (%) ? d g ps , power gain (db) 16.4 16.2 16 15.8 15.6 15.4 15.2 2080 2100 2120 2140 2160 2180 2200 2220 42 -- 3 2 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 4 0 -- 6 0 1 300 imd, intermodulatio n distortion (dbc) -- 5 0 im3--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 50 70 110 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 90 ? d acpr parc acpr (dbc) -- 4 0 -- 1 0 -- 1 5 -- 2 0 -- 3 0 -- 2 5 -- 3 5 18 g ps , power gain (db) 17.5 17 16.5 16 15.5 15 --1db=18.6w -- 5 g ps im3--l 1 v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc f = 2140 mhz, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =28vdc,p out =63w(avg.) i dqa = 750 ma, v gsb =0.7vdc single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 100 im5--l im5--u v dd =28vdc,p out = 40 w (pep) i dqa = 750 ma, v gsb =0.7vdc two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im7--l im7--u --2db=55.1w --3db=77.5w g ps
6 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 5 -- 3 5 14.5 17.5 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 16.5 10 100 200 10 -- 7 5 acpr (dbc) 16 15.5 15 -- 1 5 -- 4 5 -- 5 5 -- 6 5 figure 7. broadband frequency response 0 24 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 750 ma v gsb =0.7vdc 16 12 8 gain (db) 20 4 1700 1800 1900 2000 2100 2200 2300 gain 2110 mhz 2170 mhz 2140 mhz 2140 mhz 2110 mhz 2170 mhz 2110 mhz v dd =28vdc,i dqa = 750 ma v gsb = 0.7 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf
AFT21H350W03SR6 aft21h350w04gsr6 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dqa = 763 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 4.29 - j7.28 3.75 + j6.90 3.07 - j4.95 18.7 51.9 155 54.7 -12 2140 5.23 - j7.74 4.64 + j7.21 3.16 - j5.18 18.7 51.9 156 54.8 -13 2170 6.26 - j7.95 5.75 + j7.35 3.27 - j5.37 18.9 51.9 155 54.1 -13 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 4.29 - j7.28 3.96 + j7.42 3.18 - j5.59 16.5 52.8 189 57.1 -18 2140 5.23 - j7.74 5.04 + j7.81 3.30 - j5.71 16.6 52.8 189 56.8 -19 2170 6.26 - j7.95 6.44 + j7.94 3.40 - j5.88 16.7 52.7 187 56.2 -20 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 8. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 763 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 4.29 - j7.28 3.63 + j7.22 5.78 - j1.16 21.6 49.6 91 65.4 -22 2140 5.23 - j7.74 4.54 + j7.46 5.88 - j1.54 21.5 49.8 95 65.1 -21 2170 6.26 - j7.95 5.66 + j7.76 4.75 - j1.49 21.6 49.8 96 65.0 -23 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 4.29 - j7.28 3.84 + j7.59 6.49 - j2.11 19.4 50.6 114 65.3 -28 2140 5.23 - j7.74 4.91 + j8.02 6.10 - j1.54 19.5 50.4 110 65.9 -30 2170 6.26 - j7.95 6.28 + j8.14 5.82 - j2.06 19.4 50.7 117 65.7 -29 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 9. carrier side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 v dd =28vdc,v gsb =0.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.76 - j5.24 2.87 + j5.85 2.36 - j4.99 14.4 54.7 292 54.6 -22 2140 3.54 - j5.55 3.73 + j6.27 2.61 - j5.09 14.6 54.7 292 55.0 -23 2170 5.02 - j5.82 5.01 + j6.41 2.80 - j5.30 14.6 54.6 288 53.5 -25 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.76 - j5.24 3.16 + j6.20 2.51 - j5.47 12.1 55.3 337 54.4 -28 2140 3.54 - j5.55 4.25 + j6.63 2.77 - j5.62 12.3 55.3 336 53.9 -29 2170 5.02 - j5.82 5.80 + j6.63 3.08 - j5.67 12.4 55.2 332 54.1 -31 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 10. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.76 - j5.24 2.36 + j6.00 3.43 - j2.05 15.8 52.8 189 66.0 -29 2140 3.54 - j5.55 3.08 + j6.45 3.22 - j2.11 15.9 52.8 191 65.9 -31 2170 5.02 - j5.82 4.19 + j6.80 3.07 - j2.13 15.9 52.8 190 65.0 -33 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.76 - j5.24 2.74 + j6.36 3.71 - j2.53 13.7 53.7 233 65.3 -36 2140 3.54 - j5.55 3.67 + j6.84 3.57 - j2.44 13.8 53.6 231 65.1 -39 2170 5.02 - j5.82 5.15 + j7.06 3.45 - j2.52 13.8 53.7 234 64.3 -41 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 11. peaking side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
AFT21H350W03SR6 aft21h350w04gsr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 2140 mhz 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p1db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 3 45 9 -- 1 -- 4 -- 5 6 -- 6 2 figure 13. p1db load pull efficiency contours (%) real ( ? ) figure 14. p1db load pull gain contours (db) real ( ? ) figure 15. p1db load pull am/pm contours ( ?) real ( ? ) -- 7 78 -- 3 3 45 9 6 2 78 3 45 9 6 2 78 3 45 9 6 2 78 p e 49 49.5 50 50.5 51 51.5 48 48.5 p e 64 62 60 58 56 54 52 50 p e 22 21 21.5 20.5 20 19.5 19 18.5 18 p e -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 2 2 -- 2 4 -- 2 6 -- 2 8
10 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 p3db -- typical carrier side load pull contours ? 2140 mhz 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 0 -- 2 -- 1 -- 4 -- 5 -- 6 -- 7 -- 3 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p3db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 3 45 9 -- 1 -- 4 -- 5 6 -- 6 2 figure 17. p3db load pull efficiency contours (%) real ( ? ) figure 18. p3db load pull gain contours (db) real ( ? ) figure 19. p3db load pull am/pm contours ( ?) real ( ? ) -- 7 78 -- 3 3 45 9 6 2 78 3 45 9 6 2 78 3 45 9 6 2 78 49.5 50 50.5 51 51.5 p e 52 52.5 49 64 62 60 58 54 52 50 p e 56 20 19.5 19 18 p e 18.5 17.5 17 16.5 16 -- 1 8 -- 2 0 -- 2 2 -- 2 4 -- 2 6 -- 2 8 p e -- 3 0 -- 3 2 -- 3 4 52
AFT21H350W03SR6 aft21h350w04gsr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 2140 mhz imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p1db load pull output power contours (dbm) real ( ? ) -- 2 imaginary ( ? ) 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 figure 21. p1db load pull efficiency contours (%) real ( ? ) figure 22. p1db load pull gain contours (db) real ( ? ) figure 23. p1db load pull am/pm contours ( ?) real ( ? ) -- 7 44.5 -- 3 5.5 p 51 51.5 50.5 52 52.5 53 53.5 54 54.5 54 53.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 62 60 50 p e e 52 54 56 58 64 12.5 12 p e 13 13.5 14 14.5 15 15.5 -- 2 2 -- 2 4 -- 2 6 -- 2 8 p e -- 3 0 -- 3 2 -- 3 4 -- 3 6
12 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 p3db -- typical peaking side load pull contours ? 2140 mhz imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 24. p3db load pull output power contours (dbm) real ( ? ) -- 2 imaginary ( ? ) 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 figure 25. p3db load pull efficiency contours (%) real ( ? ) figure 26. p3db load pull gain contours (db) real ( ? ) figure 27. p3db load pull am/pm contours ( ?) real ( ? ) -- 7 44.5 -- 3 5.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 -- 2 2 2.5 3 5 -- 1 -- 4 -- 5 3.5 -- 6 1.5 -- 7 44.5 -- 3 5.5 p e 51.5 52 52.5 53 53.5 54 54.5 55 64 62 60 58 54 50 60 p e 52 56 11 10.5 10 p e 11.5 12 12.5 13 13.5 -- 2 6 -- 2 8 p e -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0 -- 4 2
AFT21H350W03SR6 aft21h350w04gsr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6
AFT21H350W03SR6 aft21h350w04gsr6 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6
AFT21H350W03SR6 aft21h350w04gsr6 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2013 ? initial release of data sheet
18 rf device data freescale semiconductor, inc. AFT21H350W03SR6 aft21h350w04gsr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft21h350w03s rev. 0, 9/2013

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